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| NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large-signal applications required in industrial equipment. Features: D Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency = 50% D S Parameter Data from 100MHz to 1GHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VCE = 10V, IC = 50mA IC = 50mA, IB = 5mA 20 - 60 - 150 0.5 V V(BR)CEO V(BR)CBO V(BR)EBO ICEO IC = 5mA, IB = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCE = 15V, IB = 0 20 35 4 - - - - - - - - 10 V V V A Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Functional Tests Common-Emitter Amplifier Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance GPE h Zin Zout VCC = 12.5V, PO = 0.75W, f = 470MHz 8.0 50 - - 8.5 70 14+j4.0 28-j38 - - - - dB % fT Cob VCE = 10V, IC = 100mA, f = 200MHz VCB = 12.5V, IE = 0, f = 1MHz 1800 - 2000 3.5 - 4.0 MHz pF Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793) |
Price & Availability of NTE486
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